Preparation and dielectric properties of dense and amorphous alumina film by sol-gel technology

Ceramics International

Volumn 39, Issue 7, 2013, Pages 7613-7618

  Hu, Baofu ^a,b   Yao, Manwen ^a   Yang, Pengfei ^a   Shan, Wei ^a   Yao, Xi ^a  

^a TONGJI UNIVERSITY   (China)

^b HENAN POLYTECHNIC UNIVERSITY   (China)

Author keywords

A. Sol gel processes; C. Electrical properties; D. Al2O 3

Indexed keywords

ALUMINUM OXIDE FILMS; D. AL2O 3; DIELECTRIC MEASUREMENTS; ELECTRICAL CHARACTERISTIC; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; MEASURING TEMPERATURE; METAL-INSULATOR-METAL STRUCTURES; SINTERING TEMPERATURES;

ALUMINA; ALUMINUM; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; FILM PREPARATION; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; PHOTOELECTRONS; SINTERING; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 84880293310     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.03.016     Document Type: Article

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