Metal-semiconductor-metal ultraviolet avalanche photodiodes fabricated on bulk GaN substrate

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1260-1262

  Xie, F ^a   Lu, H ^a   Chen, D J ^a   Xiu, X Q ^a   Zhao, H ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Avalanche photodiode (APD); GaN; homoepitaxy; metal semiconductor metal (MSM)

Indexed keywords

AVALANCHE BREAKDOWN; AVALANCHE GAINS; DISLOCATION DENSITIES; GAN; GAN SUBSTRATE; HIGH-VOLTAGES; HOMOEPITAXIAL LAYERS; HOMOEPITAXY; MAPPING TECHNIQUES; METAL SEMICONDUCTOR METAL; ORDERS OF MAGNITUDE; REJECTION RATIOS; ROOM TEMPERATURE; SCHOTTKY ELECTRODES; ULTRA-VIOLET; UV ILLUMINATIONS;

AVALANCHE PHOTODIODES; BIAS VOLTAGE; DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS;

METALS;

EID: 80052027128     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160149     Document Type: Article

References (11)

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