SCOPUS 정보 검색 플랫폼

Chinese Physics Letters

Volumn 29, Issue 9, 2012, Pages

A GaN p-i-p-i-n ultraviolet avalanche photodiode

(6) Zheng, Ji Yuan a Wang, Lai a Hao, Zhi Biao a Luo, Yi a Wang, Lan Xi b Chen, Xue Kang b

a TSINGHUA UNIVERSITY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS;

AVALANCHE BREAKDOWN; MICRO-PLASMAS; P-I-N STRUCTURE; PEAK RESPONSIVITY; PHOTO DIODES; PIN STRUCTURES; PLASMA BREAKDOWN; POSITIVE COEFFICIENTS; TEMPERATURE TEST;

GALLIUM NITRIDE;

EID: 84866532777 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/29/9/097804 Document Type: Article

Times cited : (11)

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