Carrier transport mechanisms of n-ZnO/ZnMgO/p-GaN heterojunctions revealed by temperature-dependent current-voltage characteristics

Materials Science in Semiconductor Processing

Volumn 16, Issue 6, 2013, Pages 1684-1687

  Bian, Jiming ^a,b   Kou, Xiaoqiang ^a   Zhang, Zhikun ^a   Zhang, Yuzhi ^b   Sun, Jingchang ^c   Qin, Fuwen ^a   Liu, Weifeng ^a   Luo, Yingmin ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c LIAONING NORMAL UNIVERSITY   (China)

Author keywords

Gallium nitride; Heterostructure; Tunneling; Ultrasonic spray pyrolysis; Zinc magnesium oxide; Zinc oxide

Indexed keywords

CARRIER TRANSPORT MECHANISMS; CURRENT-VOLTAGE MEASUREMENTS; DESIGN AND APPLICATION; ELECTRON BLOCKING LAYER; HETEROSTRUCTURE; HETEROSTRUCTURE DEVICES; ULTRASONIC SPRAY PYROLYSIS; ZINC MAGNESIUM OXIDE;

CARRIER TRANSPORT; ELECTRON INJECTION; ELECTRON TUNNELING; GALLIUM NITRIDE; SEMICONDUCTOR DIODES; SPRAY PYROLYSIS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84880116892     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.06.014     Document Type: Article

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