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Volumn 60, Issue 8, 2012, Pages 1215-1218

Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes

Author keywords

Epitaxial structure; Gallium nitride (GaN); Lightemitting diodes (LEDs); Multiple quantum wells (MQW); Nonpolar

Indexed keywords


EID: 84879810643     PISSN: 03744884     EISSN: 19768524     Source Type: Journal    
DOI: 10.3938/jkps.60.1215     Document Type: Article
Times cited : (1)

References (14)
  • 12
    • 84879833593 scopus 로고    scopus 로고
    • by STR Group Inc, St.-Petersburg, Russia
    • SiLENSe and SpeCLED by STR Group Inc, St.-Petersburg, Russia, http://www.str-soft.com.
    • SiLENSe and SpeCLED


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.