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Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 8, 2011, Pages 274-276

Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

(6) Kim, Dong Ho a Kim, Su Jin a Kim, Seung Hwan b Jeong, Tak b Hwang, Sung Min c Kim, Tae Geun a

a Korea University (South Korea)

b Korea Photonics Technology Institute (KOPTI) (South Korea)

c Korea Electronic Technology Institute (KETI) (South Korea)

Author keywords

Current injection; LED; Ni Al alloys; Nonpolar GaN

Indexed keywords

CURRENT INJECTIONS; DEVICE PERFORMANCE; FORWARD VOLTAGE; GAN LEDS; N-TYPE OHMIC CONTACT; NIAL ALLOY; NON-POLAR; NON-POLAR GAN; SCHOTTKY BARRIER HEIGHTS; SPECIFIC CONTACT RESISTIVITY; SURFACE BAND BENDING; TI/AL/NI/AU;

ELECTRIC CONTACTORS; GALLIUM NITRIDE; OHMIC CONTACTS; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; VANADIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 79961080800 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.201105265 Document Type: Article

Times cited : (5)

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