Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO 2 (001) substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7602, Issue , 2010, Pages

  Zhang, R ^a   Xie, Z L ^a   Liu, B ^a   Xiu, X Q ^a   Fu, D Y ^a   Zhang, Z ^a   Han, P ^a   Zheng, Y D ^a   Zhou, S M ^b  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

Anisotropic strain; k p Hamiltonian approach; Non polar GaN; Polarization degree; Polarized InGaN GaN LED

Indexed keywords

ANISOTROPIC STRAIN; HAMILTONIAN APPROACH; INGAN/GAN; NON-POLAR GAN; POLARIZATION DEGREE;

ANISOTROPY; GALLIUM NITRIDE; HAMILTONIANS; LATTICE MISMATCH; LIGHT; LIGHT EMITTING DIODES; LITHIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); POLARIZATION; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 77951703649     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842753     Document Type: Conference Paper

References (12)

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