Low-resistance nonalloyed Ti/Al ohmic contacts on N-face n-type GaN via an O2 plasma treatment

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 149-151

  Kim, Su Jin ^a   Nam, Tae Yang ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

GaN; N face; ohmic contacts; oxygen plasma

Indexed keywords

CONTACT RESISTIVITIES; ELECTRICAL PROPERTY; GAN; LOW RESISTANCE; N-FACE; NITROGEN VACANCIES; OXYGEN PLASMA; PLASMA TREATMENT; TRANSMISSION ELECTRON;

ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; NITROGEN PLASMA; OHMIC CONTACTS; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA DEPOSITION;

EID: 79151482320     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093556     Document Type: Article

References (15)

1. M. Sumiya, K. Yoshimura, T. Ito, K. Ohtsuka, S. Fuke, K. Mizuno, M. Yoshimoto, H. Koinuma, A. Ohtomo, and M. Kawasaki, "Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate," J. Appl. Phys., vol. 88, no. 2, pp. 1158-1165, Jul. 2000.
2. T. Jang, S. N. Lee, O. H. Nam, and Y. Park, "Investigation of Pd/Ti/Al and Ti/Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN," Appl. Phys. Lett., vol. 88, no. 19, pp. 193 505-1-193 505-3, May 2006.
3. H. K. Cho, S. K. Kim, and J. S. Lee, "An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment," J. Phys. D, Appl. Phys., vol. 41, no. 17, p. 175 107, Sep. 2008.
4. J. W. Jeon, T.-Y. Seong, H. Kim, and K.-K. Kim, "TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes," Appl. Phys. Lett., vol. 94, no. 4, pp. 042 102-1-042 102-3, Jan. 2009.
5. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z.-F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morkoç, "Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN," Appl. Phys. Lett., vol. 69, no. 11, pp. 1556-1558, Sep. 1996.
6. O. Kubaschewski, C. B. Alock, and P. J. Spencer, Materials Thermochemistry. Oxford, U.K.: Pergamon, 1993.
7. U. Karrer, O. Ambacher, and M. Stutzmann, "Influence of the crystal polarity on the properties of Pt/GaN Schottky diodes," Appl. Phys. Lett., vol. 77, no. 13, pp. 2012-2014, Sep. 2000.
8. A. Rizzi and H. Lüth, "Comment on influence of crystal polarity on the properties of Pt/GaN Schottky diodes," Appl. Phys. Lett., vol. 80, no. 3, pp. 530-531, Jan. 2002.
9. L. K. Li, L. S. Tan, and E. F. Chor, "Effects of surface plasma treatment on n-GaN ohmic contact formation," J. Cryst. Growth, vol. 268, no. 3/4, pp. 499-503, Aug. 2004.
10. I. Shalish, Y. Shapira, L. Burstein, and J. Salzman, "Surface states and surface oxide in GaN layers," J. Appl. Phys., vol. 89, no. 1, pp. 390-395, Jan. 2001.
11. H. W. Choi, S. J. Chua, A. Ramam, J. S. Pan, and A. T. S. Wee, "Plasma-induced damage to n-type GaN," Appl. Phys. Lett., vol. 77, no. 12, pp. 1795-1797, Sep. 2000.
12. D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, "Defect donor and acceptor in GaN," Phys. Rev. Lett., vol. 79, no. 12, pp. 2273-2276, Sep. 1997.
13. D. W. Jenkins and J. D. Dow, "Electronic structures and doping of InN, InxGa1-xN, and InxAl1-xN," Phys. Rev. B, Condens. Matter, vol. 39, no. 5, pp. 3317-3329, Feb. 1989.
14. C. G. Van de Walle, "Electronic materials theory: Interfaces and defects," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 21, no. 5, pp. S182-S190, Sep. 2003.
15. X. Xu, H. Liu, C. Shi, Y. Zhao, S. Fung, and C. D. Beling, "Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN," J. Appl. Phys., vol. 90, no. 12, pp. 6130-6134, Dec. 2001.