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Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a -plane n -type GaN

(5) Kim, Dong Ho a Kim, Su Jin a Seo, Yu Jeong a Kim, Tae Geun a Hwang, Sung Min b

a Korea University (South Korea)

b Korea Electronic Technology Institute (KETI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; ANNEALING PROCESS; ANNEALING TEMPERATURES; INTERDIFFUSED LAYER; LOW RESISTANCE; NON-POLAR; OHMIC BEHAVIOR; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BEHAVIORS; SPECIFIC CONTACT RESISTIVITY;

ANNEALING; ELECTRIC CONTACTORS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDE;

EID: 79955399591 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579252 Document Type: Article

Times cited : (10)

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