Optimization of GaN window layer for InGaN solar cells using polarization effect

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Jani, Omkar ^a,b   Jampana, Balakrishnam ^a   Mehta, Mohit ^a   Yu, Hongbo ^b   Ferguson, Ian ^b   Opila, Robert ^a   Honsberg, Christiana ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; HIGH-EFFICIENCY SOLAR CELLS; IMPROVE PERFORMANCE; MATERIAL SYSTEMS; POLARIZATION EFFECT; THEORETICAL MODELING; TOP CONTACT; WINDOW LAYER;

SOLAR CELLS;

GALLIUM NITRIDE;

EID: 84879712301     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922725     Document Type: Conference Paper

References (21)

1. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode, 2nd ed. (Springer, Berlin, 2000).
2. O. Jani, I. Ferguson, C. Honsberg, S. Kurtz, "Design and characterization of GaN/lnGaN solar cells, " Appl. Phys. Lett., 91, 2007, pp. 132117.
3. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, J. Graul, "Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap, " Phys. Stat. Sol. B, 229, 2002, pp. R1-R3
4. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical Bandgap Energy of Wurtzite InN", Appl. Phys. Lett., 81, 20002, pp. 1246.
5. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, W. J. Schaff, "Temperature Dependence of the Fundamental Band Gap of InN", J. Appl. Phys., 94, 2003, pp. 4457.
6. C. Honsberg, O. Jani, A. Doolittle, E. Trybus, G. Namkoong, I. Ferguson, D. Nicol, A. Payne, "lnGaN-A New Solar Cell Material, " Proceedings of the 19th European Photovoltaic Science and Engineering Conference, Paris, France, June 7-11, 2004, p. 15-20.
7. A. De Vos, Endoreversible Thermodynamics of Solar Energy Conversion, (Oxford University Press, Oxford, 1992).
8. Y. Nanishi, Y. Saito and T. Yamaguchi, "R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys", Jpn. J. Appl. Phys., 42, 2003, pp. 2549.
9. F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in III-V Nitride Alloys", Phys. Rev. B, 64, 2001, pp. 085207/1.
10. V. Fiorentini F. Bernardini, "Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences", Phys. Stat. Sol. B, 216, 1999, pp. 391.
11. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsnbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AIGaN/GaN heterostructures, " J. Appl. Phys., 85, 1999, pp. 3222.
12. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies, "High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy, " Appl. Phys. Lett., 78, 2001, pp. 1252.
13. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, M. Godlewski, "Giant electric fields in unstrained GaN single quantum well, " Appl. Phys. Lett., 74, 1999, pp. 3827.
14. M. A. Green, Silicon solar cells: Advance principles and practices, (Bridge, Sydney, 1995).
15. G. S. Kamath, J. Ewan, R. C. Knechtli, "Large-area high-efficiency (AIGa)As-GaAs solar cells, " IEEE Trans. Electron. Dev., 24, 1977, pp. 473.
16. N. Faleev, C. Honsberg, O. Jani, I. Ferguson, "Crystalline perfection of GaN and AIN epitaxial layers and the main features of structural transformation of crystalline defects, " J. Crystal Growth, 300, 2007. pp. 246.
17. J.-K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, K.-K. Shih, L.-C. Chen, F.-R. Chen, J.-J. Kai "Low-resistance Ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films, " J. Appl. Phys., 86, 1999, pp. 4491.
18. P. A. Basore and D. A. Clugston, PC1d Version 5. 9, Sydney, Australia: Univ. New South Wales, 2003.
19. M. Mehta, O. Jani, C. Honsberg, B. Jampana, I. Ferguson, A. Doolittle, "Modifying PC1 D to model spontaneous and piezoelectric polarization in III-V nitride solar cells, " Proceedings of the 2zro European Photovoltaic Science and Engineering Conference, Milan, Italy, September 3-7, 2007, p. 409-413.
20. S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, S. J. Son, "Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions, " Appl. Phys. Lett., 78, 2001, pp. 3265.
21. J. K. Sheu, J. M. Tsai, S. C. shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. H. chang, G. C. Chi, "Low operation voltage of InGaN/GaN light-emitting diodes with Si-doped In[0. 3]Ga[0. 7]N/GaN short period superlattice tunneling contact layer, " IEEE Electron. Dev. Lett., 22, 2001, pp. 460.