메뉴 건너뛰기




Volumn 65, Issue 2, 2013, Pages 130-134

Sol-gel processed indium zinc oxide thin film and transparent thin-film transistors

Author keywords

Indium zinc oxide (IZO); Solution process; Thin film transistors; Transmittance

Indexed keywords

ACTIVE CHANNEL LAYERS; ANNEALING TEMPERATURES; INDIUM CONCENTRATION; INDIUM ZINC OXIDES; SOLUTION PROCESS; THIN-FILM TRANSISTOR (TFTS); TRANSMITTANCE; TRANSPARENT THIN FILM TRANSISTOR;

EID: 84879690312     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-012-2916-2     Document Type: Article
Times cited : (17)

References (20)
  • 2
    • 33745435681 scopus 로고    scopus 로고
    • 10.1016/j.jnoncrysol.2006.01.073 1:CAS:528:DC%2BD28Xltl2rs7k%3D
    • Hosono H (2006) J Non Cryst Solids 352:851-858
    • (2006) J Non Cryst Solids , vol.352 , pp. 851-858
    • Hosono, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.