Study of working pressure on the optoelectrical properties of Al-Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

Applied Surface Science

Volumn 280, Issue , 2013, Pages 104-108

  Hsu, Feng Hao ^a   Wang, Na Fu ^b   Tsai, Yu Zen ^b   Chuang, Ming Chieh ^b   Cheng, Yu Song ^b   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Electrical properties; Heterojunction solar cell; Sputtering; Thin film; Working pressure; ZnO

Indexed keywords

BINARY ALLOYS; CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INFRARED DEVICES; INFRARED RADIATION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SOLAR CELLS; SPUTTERING; SUBSTRATES; ZINC OXIDE;

DC MAGNETRON SPUTTERING; DC MAGNETRON SPUTTERING TECHNIQUE; HETEROJUNCTION SOLAR CELLS; ILLUMINATION CONDITIONS; OPTOELECTRICAL PROPERTIES; RF MAGNETRON SPUTTERING METHOD; SOLAR-CELL APPLICATIONS; WORKING PRESSURES;

THIN FILMS;

EID: 84879687559     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.04.103     Document Type: Article

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