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Thin Solid Films

Volumn 519, Issue 16, 2011, Pages 5577-5581

Structures and properties of the Al-doped ZnO thin films prepared by radio frequency magnetron sputtering

(5) Yue, Hongyun a Wu, Aimin a Feng, Yudong b Zhang, Xueyu a Li, Tingju a

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Crystal structure; Magnetron sputtering; Transparent conducting oxide; Zinc oxide

Indexed keywords

AL-DOPED ZNO; DOPING CONCENTRATION; FILM STRESS; FIRST PRINCIPLE CALCULATIONS; HALL SYSTEMS; HIGH-CRYSTALLINE QUALITY; INTERPLANAR SPACINGS; INTERSTITIAL SITES; LATTICE PARAMETERS; RADIO FREQUENCY MAGNETRON SPUTTERING; SPUTTERING POWER; STRUCTURE ANALYSIS; SUBSTRATE TEMPERATURE; THIN FILM X-RAY DIFFRACTIONS; TRANSPARENT CONDUCTING OXIDE; WORKING PRESSURES; ZNO;

HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE CONSTANTS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; RADIO; RADIO WAVES; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

ALUMINUM;

EID: 79957985780 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.03.026 Document Type: Article

Times cited : (27)

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