Erratum: Model for thickness dependence of mobility and concentration in highly conductive zinc oxide (Optical Engineering (2013) 52:3 (033801) DOI: 10.1117/1.OE.52.3.033801);Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

Optical Engineering

Volumn 52, Issue 3, 2013, Pages

  Look, David C ^a,b,c   Kevin D Leedy, ^b   Arnold Kiefer, ^c   Bruce Claflin, ^c   Itagaki, Naho ^d   Matsushima, Koichi ^d   Surhariadi, Iping ^d  

^a WRIGHT STATE UNIVERSITY   (United States)

^b Wyle Laboratories   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d KYUSHU UNIVERSITY   (Japan)

Author keywords

Hall effect; Mobility; Reflectance; Thickness dependence; Zinc oxide

Indexed keywords

CARRIER MOBILITY; ENGINEERING; HALL EFFECT; MOLECULAR PHYSICS; REFLECTION;

ALUMINUM-DOPED ZINC OXIDE; DEGENERATE ELECTRONS; DONOR AND ACCEPTOR; DRUDE THEORY; PLASMONIC RESONANCES; SCATTERING THEORY; THICKNESS DEPENDENCE;

ZINC OXIDE;

EID: 84879568867     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.OE.56.4.049801     Document Type: Erratum

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