Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

Solid-State Electronics

Volumn 84, Issue , 2013, Pages 127-131

  Bonfiglio, Valentina ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

CMOS process variability; Nanoscale CMOS; Sensitivity analysis; Variability modeling

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR STORAGE; SENSITIVITY ANALYSIS; THRESHOLD VOLTAGE;

CMOS PROCESSS; COMPUTATIONAL BURDEN; NANO-SCALE CMOS; ORDERS OF MAGNITUDE; STANDARD DEVIATION; STATISTICAL SIMULATION; THRESHOLD VOLTAGE VARIABILITY; VARIABILITY MODEL;

FLASH MEMORY;

EID: 84879502593     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.029     Document Type: Article

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