Practical implementation of an interleaved boost converter using SiC diodes for PV applications

8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia

Volumn , Issue , 2011, Pages 372-379

  Ho, C N M ^a   Breuninger, H ^a   Pettersson, S ^a   Escobar, G ^a   Serpa, L ^a   Coccia, A ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

diode; interleaved boost converter; MOSFET; Power semiconductor; PV; SiC

Indexed keywords

INTERLEAVED BOOST CONVERTER; MOSFET; POWER SEMICONDUCTORS; PV; SIC;

COOLING SYSTEMS; DC-DC CONVERTERS; DIODES; ELECTRIC INVERTERS; MAGNETIC REFRIGERATION; PHOTOVOLTAIC CELLS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; STATIC RANDOM ACCESS STORAGE; SWITCHING; SYSTEMS ANALYSIS; THERMOELECTRIC EQUIPMENT; TOPOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052087595     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2011.5944553     Document Type: Conference Paper

References (31)

1. M. Bhatnagar, and B. J. Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for power devices," IEEE Trans. Electron Devices, vol. 40, no. 3, pp. 645 - 655, Mar. 1993.
2. B. J. Baliga, "Trends in power semiconductor devices," IEEE Trans. Electron Devices, vol. 43, no. 10, pp. 1717-1731, Oct. 1996.
3. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and Burns, M.; "Large - band - gap SiC, III - V nitride, and II - VI ZnSe - based semiconductor device technologies," Journal of Applied Physics, vol. 76, no. 3, pp. 1363 - 1398, Aug. 1994.
4. T. P. Chow, and R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1481 - 1483, Aug. 1994.
5. R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, "SiC power schottky and PiN diodes," IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 665 - 672, Apr. 2002.
6. A. Elasser, M.H. Kheraluwala, M. Ghezzo, R.L. Steigerwald, N.A. Evers, J. Kretchmer, and T.P. Chow, "A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications," IEEE Trans. Ind. Appl., vol. 39, no. 4, pp. 915 - 921, Jul. 2003.
7. A. R. Hefner, R. Singh, J. Lai, D. W. Berning, S. Bouché, and C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," IEEE Trans. Power Electron., vol. 16, no. 2, pp. 273 - 280, Mar. 2001.
8. M. M. Hernando, A. Fernández, J. García, D. G Lamar, and M. Rascón, "Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction," IEEE Trans. Ind. Electron., vol. 53, no. 2, pp. 705 - 707, Apr. 2006.
9. B. Ozpineci, and L.M. Tolbert, "Characterization of SiC schottky diodes at different temperatures," IEEE Power Electron. Lett., vol. 1, no. 2, pp. 54-57, Jun. 2003.
10. R. Singh and J. Richmond, "SiC power schottky diodes in power-factor correction circuits," CREE Application Note: CPWR-AN01, Rev. A, 2006.
11. G. Spiazzi, S. Buso, M. Citron, M. Corradin, and R. Pierobon, "Performance evaluation of a Schottky SiC power diode in a boost PFC application," IEEE Trans. Power Electron., vol. 18, no. 6, pp. 1249 - 1253, Nov. 2003.
12. A. M. Abou-Alfotouh, A. V. Radun, H. Chang, and C. Winterhalter, "A 1-MHz hard-switched silicon carbide DC-DC converter," IEEE Trans. Power Electron., vol. 21, no. 4, pp. 880 - 889, Jun. 2006.
13. B. Ozpineci, M. Chinthavali, A. Kashyap, L. M. Tolbert, A. Mantooth, "A 55 kW three-phase inverter with Si IGBTs And SiC Schottky Diodes," IEEE Trans. Ind. Appl, vol. 45, no. 1, pp. 278 - 285, Jan./Feb. 2009.
14. S. B. Kjaer, J. K. Pedersen, and F. Blaabjerg, "A review of single-phase grid-connected inverters for photovoltaic modules," IEEE Trans. Ind. Appl., vol. 41, no. 5, pp. 1292 - 1306, Sept./Oct. 2005.
15. Q. Li, and P. Wolfs, "A Review of the Single Phase Photovoltaic Module Integrated Converter Topologies With Three Different DC Link Configurations," IEEE Trans. Power Electron., vol. 23, no. 3, pp. 1320 - 1333, May. 2008.
16. J. L. Agorreta, L. Reinaldos, R González, M. Borrega, J. Balda, and L. Marroyo, "Fuzzy switching technique applied to PWM boost converter operating in mixed conduction mode for PV systems," IEEE Trans. Ind. Electron., vol. 56, no. 11, pp. 4363 - 4373, Nov. 2009.
17. N. Femia, G. Petrone, G. Spagnuolo, and M. Vitelli, "A technique for improving P&O MPPT performances of double-stage grid-connected photovoltaic systems," IEEE Trans. Ind. Electron., vol. 56, no. 11, pp. 4473 - 4482, Nov. 2009.
18. B. Yang, W. Li, Y. Zhao, and X. He, "Analytical design and analysis of a grid-connected photovoltaic power system," IEEE Trans. Power Electron., vol. 25, no. 4, pp. 992 - 1000, Apr. 2010.
19. P.-W. Lee; Y.-S. Lee; D. Cheng, X.-C. Liu, "Steady-state analysis of an interleaved boost converter with coupled inductors," IEEE Trans. Ind. Electron., vol. 47, no. 4, pp. 787 - 795, Aug. 2000.
20. Y.-C. Hsieh; T.-C. Hsueh; H.-C. Yen, "An interleaved boost converter with zero-voltage transition," IEEE Trans. Power Electron., vol. 24, no. 4, pp. 973 - 978, Apr. 2009.
21. L. Huber, B. T. Irving, M. M. Jovanovic, "Open-loop control methods for interleaved DCM/CCM boundary boost PFC converters" IEEE Trans. Power Electron., vol. 23, no. 4, pp. 1649 - 1657, Jul. 2008.
22. N. DeCristofaro, "Amorphous metals in electric-power distribution applications," MRS Bulletin, vol. 23, no. 5, pp. 50-56, May 1998.
23. I. Cadirci, S. Varma, M. Ermis, and T. Gulsoy, "A 20 kW, 20 kHz unity power factor boost converter for three-phase motor drive applications from an unregulated single-phase supply" IEEE Trans. Energy Conversion, vol. 14, no. 3, pp. 471 - 478, Sept. 1999.
24. "Power factor correction inductor design for switched mode power supplies using Metglas Powerlite C-Cores," Application Guide.
25. Y. Ren, M. Xu, J. Zhou and F. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 310 - 318, Mar. 2006.
26. D. Xu, H. Lu, L. Huang, S. Azuma, M. Kimata and R. Uchida, "Power loss and junction temperature analysis of power semiconductor devices," IEEE Trans. Ind. Appl., vol. 38, no. 5, pp. 1426 - 1431, Sept./Oct. 2002.
27. A. D. Rajapakse, A. M. Gole, and P. L. Wilson, "Electromagnetic transients simulation models for accurate representation of switching losses and thermal performance in power electronic systems," IEEE Trans. Power Del., vol. 20, no. 1, pp. 319 - 327, Jan. 2005.
28. Y. Xiong, S. Sun, H. Jia, P. Shea, and Z. J. Shen, "New physical insights on power MOSFET switching losses," IEEE Trans. Power Electron., vol. 24, no. 2, pp. 525 - 531, Feb. 2009.
29. Z. Liang, B. Lu, J. D. van Wyk, and F. C. Lee, "Integrated CoolMOS FET/SiC-diode module for high performance power switching," IEEE Trans. Power Electron., vol. 20, no. 3, pp. 679 - 686, May. 2005.
30. L. Lorenz, G. Deboy, and I. Zverev, "Matched pair of CoolMOS transistor with SiC-Schottky diode - advantages in application," IEEE Trans. Ind. Appl., vol. 40, no. 5, pp. 1265 - 1272, Sept./Oct. 2004.
31. C. Ho, F. Canales, A. Coccia and M. Laitinen, "A circuit-level analytical study on switching behaviors of SiC diode at basic cell for power converters," in Proc. IEEE IAS08, Oct. 2008.