5kV/200ns pulsed power switch based on a SiC-JFET super cascode

Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC

Volumn , Issue , 2008, Pages 358-361

  Biela, J ^a   Aggeler, D ^a   Bortis, D ^a   Kolar, J W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP MATERIALS; BIPOLAR DEVICES; BIPOLAR TECHNOLOGIES; BLOCKING VOLTAGES; CASCODE; HIGH CURRENTS; HIGH VOLTAGES; HIGH-POWER; LOW VOLTAGES; MOS FETS; OPERATING VOLTAGES; PULSE POWER APPLICATIONS; PULSED-POWER; PULSED-POWER SWITCHES; SEMICONDUCTOR TECHNOLOGIES; SWITCHING LOSS; SWITCHING PERFORMANCE; SWITCHING SPEED;

ACTIVE FILTERS; DC GENERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC SWITCHGEAR; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHES; SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 62949096283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPMC.2008.4743658     Document Type: Conference Paper

References (8)

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8. R. Elpelt, P. Friedrichs, R. Schorner, K. Dohnke, H. Mitlehner and D. Stephani, "Serial connection of SiC VJFETs - features of a fast high voltage switch," REE. Revue de l'Electricite et de l'Electronique, Pages:60-68, 2004.