Resistive switching driven by electric field in the mott insulators AM 4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a new class of non-volatile RRAM memory

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Souchier, E ^a   Vaju, C ^a   Guiot, V ^a   Corraze, B ^a   Janod, E ^a   Tranchant, J ^a   Mazoyer, P ^b   Besland, M P ^a   Cario, L ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HIGH ENERGY PHYSICS; RRAM; SWITCHING;

ELECTROCHEMICAL EFFECTS; MOTT-INSULATING STATE; NON-VOLATILE; PHASE CHANGE; POLYCRYSTALLINE THIN FILM; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING;

MOTT INSULATORS;

EID: 79959934702     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873220     Document Type: Article

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