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Applied Physics Express

Volumn 4, Issue 5, 2011, Pages

High-frequency organic complementary ring oscillator operating up to 200 kHz

(4) Kitamura, Masatoshi a,b Kuzumoto, Yasutaka a,c Aomori, Shigeru a,c Arakawa, Yasuhiko a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b KOBE UNIVERSITY (Japan)

c SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-CONTACT; CHANNEL DIMENSION; COMPLEMENTARY CIRCUITS; DYNAMIC PROPERTY; HIGH FREQUENCY HF; N-CHANNEL; OSCILLATION FREQUENCY; PENTACENES; RING OSCILLATOR; SIGNAL DELAYS; SUPPLY VOLTAGES;

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

OSCILLATORS (ELECTRONIC);

EID: 79956147498 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.051601 Document Type: Article

Times cited : (36)

References (20)

1
- 42549114773
- M. Kitamura and Y. Arakawa: J. Phys.: Condens. Matter 20 (2008) 184011.
- (2008) J. Phys.: Condens. Matter. , vol.20 , pp. 184011
- Kitamura, M.¹ Arakawa, Y.²

2
- 33847301145
- A. Facchetti: Mater. Today 10 [3] (2007) 28.
- (2007) Mater. Today , vol.10 , Issue.3 , pp. 28
- Facchetti, A.¹

3
- 42549120674
- T. Mori: J. Phys.: Condens. Matter 20 (2008) 184010.
- (2008) J. Phys.: Condens. Matter. , vol.20 , pp. 184010
- Mori, T.¹

4
- 0001624623
- Y.-Y. Lin, A. Dodabalapur, R. Sarpeshkar, Z. Bao, W. Li, K. Baldwin, V. R. Raju, and H. E. Katz: Appl. Phys. Lett. 74 (1999) 2714.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2714
- Lin, Y.-Y.¹ Dodabalapur, A.² Sarpeshkar, R.³ Bao, Z.⁴ Li, W.⁵ Baldwin, K.⁶ Raju, V.R.⁷ Katz, H.E.⁸

5
- 0035339596
- B. K. Crone, A. Dodabalapur, R. Sarpeshkar, R. W. Filas, Y.-Y. Lin, Z. Bao, J. H. O'Neill, W. Li, and H. E. Katz: J. Appl. Phys. 89 (2001) 5125.
- (2001) J. Appl. Phys. , vol.89 , pp. 5125
- Crone, B.K.¹ Dodabalapur, A.² Sarpeshkar, R.³ Filas, R.W.⁴ Lin, Y.-Y.⁵ Bao, Z.⁶ O'Neill, J.H.⁷ Li, W.⁸ Katz, H.E.⁹

6
- 17444381968
- H. Klauk, M. Halik, U. Zschieschang, F. Eder, D. Rohde, G. Schmid, and C. Dehm: IEEE Trans. Electron Devices 52 (2005) 618.
- (2005) IEEE Trans. Electron. Devices , vol.52 , pp. 618
- Klauk, H.¹ Halik, M.² Zschieschang, U.³ Eder, F.⁴ Rohde, D.⁵ Schmid, G.⁶ Dehm, C.⁷

7
- 33644542734
- B. Yoo, T. Jung, D. Basu, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks: Appl. Phys. Lett. 88 (2006) 082104.
- (2006) Appl. Phys. Lett. , vol.88 , pp. 082104
- Yoo, B.¹ Jung, T.² Basu, D.³ Dodabalapur, A.⁴ Jones, B.A.⁵ Facchetti, A.⁶ Wasielewski, M.R.⁷ Marks, T.J.⁸

8
- 33847111592
- H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik: Nature 445 (2007) 745.
- (2007) Nature , vol.445 , pp. 745
- Klauk, H.¹ Zschieschang, U.² Pflaum, J.³ Halik, M.⁴

9
- 58149090068
- J. H. Na, M. Kitamura, and Y. Arakawa: Thin Solid Films 517 (2009) 2079.
- (2009) Thin Solid Films , vol.517 , pp. 2079
- Na, J.H.¹ Kitamura, M.² Arakawa, Y.³

10
- 77950477585
- D. Bode, K. Myny, B. Verreet, B. Putten, P. Bakalov, S. Steudel, S. Smout, P. Vicca, J. Genoe, and P. Heremans: Appl. Phys. Lett. 96 (2010) 133307.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 133307
- Bode, D.¹ Myny, K.² Verreet, B.³ Putten, B.⁴ Bakalov, P.⁵ Steudel, S.⁶ Smout, S.⁷ Vicca, P.⁸ Genoe, J.⁹ Heremans, P.¹⁰

11
- 78649554841
- K.-J. Baeg, D. Khim, D.-Y. Kim, S.-W. Jung, J. B. Koo, I.-K. You, H. Yan, A. Facchetti, and Y.-Y. Noh: J. Polym. Sci., Part B 49 (2011) 62.
- (2011) J. Polym. Sci., Part B , vol.49 , pp. 62
- Baeg, K.-J.¹ Khim, D.² Kim, D.-Y.³ Jung, S.-W.⁴ Koo, J.B.⁵ You, I.-K.⁶ Yan, H.⁷ Facchetti, A.⁸ Noh, Y.-Y.⁹

12
- 67650742300
- M. Kitamura and Y. Arakawa: Appl. Phys. Lett. 95 (2009) 023503.
- (2009) Appl. Phys. Lett. , vol.95 , pp. 023503
- Kitamura, M.¹ Arakawa, Y.²

13
- 79955163297
- M. Kitamura and Y. Arakawa: Jpn. J. Appl. Phys. 50 (2011) 01BC01.
- (2011) Jpn. J. Appl. Phys. , vol.50
- Kitamura, M.¹ Arakawa, Y.²

14
- 1842759644
- S. H. Kim, J. H. Lee, S. C. Lim, Y. S. Yang, and T. Zyung: Jpn. J. Appl. Phys. 43 (2004) L60.
- (2004) Jpn. J. Appl. Phys. , vol.43
- Kim, S.H.¹ Lee, J.H.² Lim, S.C.³ Yang, Y.S.⁴ Zyung, T.⁵

15
- 33845938018
- C. Di, G. Yu, Y. Liu, X. Xu, D. Wei, Y. Song, Y. Sun, Y. Wang, D. Zhu, J. Liu, X. Liu, and D. Wu: J. Am. Chem. Soc. 128 (2006) 16418.
- (2006) J. Am. Chem. Soc. , vol.128 , pp. 16418
- Di, C.¹ Yu, G.² Liu, Y.³ Xu, X.⁴ Wei, D.⁵ Song, Y.⁶ Sun, Y.⁷ Wang, Y.⁸ Zhu, D.⁹ Liu, J.¹⁰ Liu, X.¹¹ Wu, D.¹²

16
- 42149096016
- J.-P. Hong, A.-Y. Park, S. Lee, J. Kang, N. Shin, and D. Y. Yoon: Appl. Phys. Lett. 92 (2008) 143311.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 143311
- Hong, J.-P.¹ Park, A.-Y.² Lee, S.³ Kang, J.⁴ Shin, N.⁵ Yoon, D.Y.⁶

17
- 61349188973
- M. Kitamura, Y. Kuzumoto, S. Aomori, M. Kamura, J.-H. Na, and Y. Arakawa: Appl. Phys. Lett. 94 (2009) 083310.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 083310
- Kitamura, M.¹ Kuzumoto, Y.² Aomori, S.³ Kamura, M.⁴ Na, J.-H.⁵ Arakawa, Y.⁶

18
- 0003476558
- Wiley, New York, 3rd ed.
- R. J. Baker: CMOS: Circuit Design, Layout, and Simulation (Wiley, New York, 2010) 3rd ed., p. 339.
- (2010) CMOS: Circuit Design, Layout, and Simulation , pp. 339
- Baker, R.J.¹

19
- 79956135454
- Explicit form of α can be driven using standard equations of drain currents in the saturation and linear regimes for MOSFETs
- Explicit form of α can be driven using standard equations of drain currents in the saturation and linear regimes for MOSFETs.

20
- 79956103860
- DD for turnoff
- DD for turnoff.

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