Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2748-2753

  Tang, Wei ^a,b   Picraux, S Tom ^b   Huang, Jian Yu ^c   Gusak, Andriy M ^d   Tu, King Ning ^a   Dayeh, Shadi A ^b,e  

^a Engineering IV   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d CHERKASY NATIONAL UNIVERSITY   (Ukraine)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

defects; heterogeneous nucleation; in situ TEM; Nickel silicide; silicon nanowire; twin boundary

Indexed keywords

HETEROGENEOUS NUCLEATION; IN-SITU TEM; NICKEL SILICIDE; SILICON NANOWIRES; TWIN BOUNDARIES;

GRAIN BOUNDARIES; MATERIALS PROPERTIES; MICROELECTRONICS; NANOWIRES; NICKEL; NUCLEATION; SILICIDES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECTS;

EID: 84879104265     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400949n     Document Type: Article

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