Kinetics of reactions of Ni contact pads with Si nanowires

Journal of Materials Research

Volumn 26, Issue 17, 2011, Pages 2282-2285

  Dellas, Nicholas S ^a   Abraham, Michael ^a   Minassian, Sharis ^b   Kendrick, Chito ^a   Mohney, Suzanne E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

Kinetics; Nanostructure; Si

Indexed keywords

ELECTRICAL CONTACTS; GROWTH DIRECTIONS; LINEAR KINETICS; NANOELECTRONIC DEVICES; NI CONTACTS; NI SILICIDE; PARABOLIC KINETICS; TEMPERATURE RANGE;

ACTIVATION ENERGY; ENZYME KINETICS; GROWTH KINETICS; KINETICS; NANOSTRUCTURES; NICKEL; SILICIDES; SILICON; SINGLE CRYSTALS;

NANOWIRES;

EID: 84864492362     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.188     Document Type: Article

References (15)

1. Y. Cui, Z. Zhong, D. Wang, W.U. Wang, and C.M. Lieber: High performance silicon nanowire field effect transistors. Nano Lett. 3(2), 149 (2003).
2. X. Duan, C. Niu, V. Sahi, J. Chen, J.Wallace Parce, S. Empedocles, and J.L. Goldman: High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 425, 274 (2003).
3. Y. Cui, Q. Wei, H. Park, and C.M. Lieber: Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science 293, 1289 (2001).
4. C. Lavoie, F.M. d'Heurle, C. Detavernier, and C. Cabral Jr.: Towards implementation of a nickel silicide process for CMOS technologies. Microelectron. Eng. 70, 144 (2003).
5. K.C. Lu, K.N. Tu, W.W. Wu, L.J. Chen, B.Y. Yoo, and N.V. Myung: Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si. Appl. Phys. Lett. 90, 253111 (2007).
6. K.C. Lu, W.W. Wu, H.W. Wu, C.M. Tanner, J.P. Chang, L.J. Chen, and K.N. Tu: In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Lett. 7(8), 2389 (2007).
7. Y.C. Chou, W.W. Wu, L.J. Chen, and K.N. Tu: Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires. Nano Lett. 9(6), 2337 (2009).
8. Y.C. Lin, Y. Chen, D. Xu, and Y. Huang: Growth of nickel silicides in Si and Si/SiOx core/shell nanowires. Nano Lett. 10, 4721 (2010).
9. W.M. Weber, L. Geelhaar, E. Unger, C. Cheze, F. Kreupl, H. Riechert, and P. Lugli: Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics. Phys. Status Solidi B 244(11), 4170 (2007).
10. Y. Wu, J. Xiang, C. Yang, W. Lu, and C.M. Lieber: Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature 430, 61 (2004).
11. Z. Zhang, J. Lu, P.E. Hellstrom, M. Ostling, and S.L. Zhang: Ni2Si nanowires of extraordinarily low resistivity. Appl. Phys. Lett. 88, 213103 (2006).
12. N.S. Dellas, B.Z. Liu, S.M. Eichfeld, C.M. Eichfeld, T.S. Mayer, and S.E. Mohney: Orientation dependence of nickel silicide formation in contacts to silicon nanowires. J. Appl. Phys. 105, 094309 (2009).
13. A. Katsman, Y. Yaish, E. Rabkin, and M. Beregovsky: Surface diffusion controlled formation of nickel silicides in silicon nanowires. J. Electron. Mater. 39(4), 365 (2010).
14. J.C. Ciccariello, S. Poize, and P. Gas: Lattice and grain boundary self-diffusion in Ni2Si: Comparison with thin-film formation. J. Appl. Phys. 67(7), 3315 (1990).
15. L.R. Zheng, L.S. Hung, J.W. Mayer, G. Majni, and G. Ottaviani: Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples. Appl. Phys. Lett. 41(7), 646 (1982).