Modeling of NMOS performance gains from edge dislocation stress

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Weber, Cory E ^a   Cea, Stephen M ^a   Deshpande, Hemant ^a   Golonzka, Oleg ^a   Liu, Mark Y ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED FILMS; FUTURE TECHNOLOGIES; GATE-LAST; PERFORMANCE GAIN; SCALING TRENDS; SOLID PHASE EPITAXIAL REGROWTH;

ELECTRON DEVICES; EPITAXIAL GROWTH; FINITE ELEMENT METHOD;

EDGE DISLOCATIONS;

EID: 84856993891     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131670     Document Type: Conference Paper

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