Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Woo Lee, Jae ^a,b   Sasaki, Yuichiro ^a   Ju Cho, Moon ^a   Togo, Mitsuhiro ^a   Boccardi, Guillaume ^a   Ritzenthaler, Romain ^a   Eneman, Geert ^a   Chiarella, Thomas ^a   Brus, Stephan ^a   Horiguchi, Naoto ^a   Groeseneken, Guido ^a,b   Thean, Aaron ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; CRYSTALLINE DAMAGE; DEVICE PERFORMANCE; FIN FIELD-EFFECT TRANSISTORS; HOT CARRIER RELIABILITY; LOW-FREQUENCY NOISE; LOWER NOISE; PLASMA DOPING;

CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); HOT CARRIERS; INTEGRATED CIRCUITS; RELIABILITY ANALYSIS;

SEMICONDUCTOR DOPING;

EID: 84879078879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809755     Document Type: Article

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