1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Applied Physics Letters

Volumn 102, Issue 7, 2013, Pages

  Woo Lee, Jae ^a,b   Ju Cho, Moon ^a   Simoen, Eddy ^a   Ritzenthaler, Romain ^a   Togo, Mitsuhiro ^a   Boccardi, Guillaume ^a   Mitard, Jerome ^a   Ragnarsson, Lars Åke ^a   Chiarella, Thomas ^a   Veloso, Anabela ^a   Horiguchi, Naoto ^a   Thean, Aaron ^a   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CARRIER NUMBER FLUCTUATION; CORRELATED MOBILITY FLUCTUATIONS; DUMMY GATES; FIN FIELD EFFECT TRANSISTORS; FINFETS; GATE FIRST; LOW-FREQUENCY NOISE; METAL GATE; P-TYPE; TRAP DENSITY;

INTEGRATED CIRCUITS;

MOSFET DEVICES;

EID: 84874543249     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793306     Document Type: Article

References (16)

1. N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, IEEE Electron Device Lett. 27, 383-386 (2006). 10.1109/LED.2006.873381
2. M.-F. Hung, Y.-C. Wu, and Z.-Y. Tang, Appl. Phys. Lett. 98, 162108 (2011). 10.1063/1.3582925
3. C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. Glassman, R. Grover, W. Han, D. Hanken, M. Hattendorf, P. Hentges, R. Heussner, J. Hicks, D. Ingerly, P. Jain, S. Jaloviar, R. James, D. Jones, J. Jopling, S. Joshi, C. Kenyon, H. Liu, R. McFadden, B. McIntyre, J. Neirynck, C. Parker, L. Pipes, I. Post, S. Pradhan, M. Prince, S. Ramey, T. Reynolds, J. Roesler, J. Sandford, J. Seiple, P. Smith, C. Thomas, D. Towner, T. Troeger, C. Weber, P. Yashar, K. Zawadzki, and K. Mistry, in Proceedings of IEEE Symposium on VLSI Technology (VLSIT) (2012), pp. 131-132.
4. T. Y. Hoffmann, Solid State Technol. 53 (3), 20-23 (2010).
5. G. Boccardi, R. Ritzenthaler, M. Togo, T. Chiarella, M. Kim, S. Yuichiro, A. Veloso, S. A. Chew, E. Vecchio, S. Locorotondo, K. Deyriendt, P. Ong, S. Brus, N. Horiguchi, and A. Thean, in Proceedings of International Conference on Solid State Device Materials (SSDM) (2012), pp. 723-724.
6. E. Simoen, A. Veloso, N. Horiguchi, and C. Claeys, IEEE Electron Device Lett. 33, 1366-1368 (2012). 10.1109/LED.2012.2210993
7. J. W. Lee, D. Jang, M. Mouis, G. T. Kim, T. Chiarella, T. Hoffmann, and G. Ghibaudo, Solid-State Electron. 62, 195-201 (2011). 10.1016/j.sse.2011.04.020
8. A. Veloso, Y. Higuchi, S. A. Chew, K. Devriendt, L. Ragnarsson, F. Sebaai, T. Schram, S. Brus, E. Vecchio, K. Kellens, E. Rohr, G. Eneman, E. Simoen, M. J. Cho, V. Paraschiv, Y. Crabbe, X. Shi, H. Tielens, A. Van Ammel, H. Dekkers, P. Favia, J. Geypen, H. Bender, A. Phatak, J. del Agua Borniquel, K. Xu, M. Allen, C. Liu, T. Xu, W. S. Yoo, A. Thean, and N. Horiguchi, in Proceedings of IEEE Symposium on VLSI Technology (VLSIT) (2012), pp. 33-34.
9. G. Ghibaudo, Electron. Lett. 24, 543-545 (1988). 10.1049/el:19880369
10. D. Fleury, A. Cros, H. Brut, and G. Ghibaudo, in Proceedings of IEEE International Conference on Microelectronic Test Structures (2008), pp. 160-165.
11. K. Romanjek, F. Andrieu, T. Ernst, and G. Ghibaudo, IEEE Electron Device Lett. 25, 583-585 (2004). 10.1109/LED.2004.832786
12. G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, and J. Brini, Physica Status Solidi A 124, 571-581 (1991). 10.1002/pssa.2211240225
13. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479-532 (1981). 10.1088/0034-4885/44/5/001
14. Y. Akue Allogo, M. Marin, M. de Murcia, P. Llinares, and D. Cottin, Solid-State Electron. 46, 977-983 (2002). 10.1016/S0038-1101(02)00029-1
15. M. Von Haartman and M. Östling, Low-Frequency Noise in Advanced MOS Devices, Analog Circuits and Signal Processing (Springer, Dordrecht, 2007).
16. D. Jang, J. W. Lee, C. W. Lee, J. P. Colinge, L. Montes, J. I. Lee, G. T. Kim, and G. Ghibaudo, Appl. Phys. Lett. 98, 133502 (2011). 10.1063/1.3569724