Electrical characterization of defects in schottky Au-CdTe: Ga diodes

Acta Physica Polonica A

Volumn 116, Issue 5, 2009, Pages 944-946

  Dyba, P ^a   Pllaczek Popko E ^a   Zlelony, E ^a   Gumienny, Z ^a   Szatkowski, J ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS PLOTS; CADMIUM TELLURIDE; CAPACITANCE; CHEMICAL ACTIVATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIODES; GALLIUM; SPECTROSCOPIC ANALYSIS;

ACTIVATION ENERGY E; CAPACITANCE VOLTAGE MEASUREMENTS; CAPTURE CROSS SECTIONS; CURRENT VOLTAGE; DX CENTERS; ELECTRICAL CHARACTERIZATION; RECTIFYING PROPERTIES; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY;

EID: 72949091465     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.116.944     Document Type: Conference Paper

References (7)

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3. E. Plłaczek-Popko, Z. Gumienny, J. Trzmiel, J. Szatkowski, Opt. Appl. 38, 559 (2008).
4. J. Trzmiel, E. Plłaczek-Popko, K. Weron, J. Szatkowski, E. Wojtyna, Acta Phys. Pol. A 114, 1417 (2008).
5. E.H. Rhoderic, R.H. Wiliams, Metal Semiconductor Contact, 2nd ed., Clarendon, Oxford 1988.
6. S.M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, 3rd ed., Wiley, Hoboken, New Jersey 2007.
7. P. Blood, J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, 1992.