The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

Science China Technological Sciences

Volumn 54, Issue 2, 2011, Pages 375-378

  Liu, Jun ^a   He, Jin Liang ^a   Hu, Jun ^a   Long, Wang Cheng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Admittance spectroscopy; Bulk electron trap; Schottky barrier; Sintering temperature; ZnO varistor

Indexed keywords

BISMUTH COMPOUNDS; DETERIORATION; ELECTRIC ADMITTANCE; ELECTRON TRAPS; ELECTRONS; II-VI SEMICONDUCTORS; OXIDE MINERALS; SCHOTTKY BARRIER DIODES; VARISTORS; ZINC OXIDE;

ADMITTANCE SPECTROSCOPIES; BULK ELECTRONS; SCHOTTKY BARRIERS; SINTERING TEMPERATURES; ZNO VARISTORS;

SINTERING;

EID: 79953882441     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-010-4216-9     Document Type: Article

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