메뉴 건너뛰기




Volumn 21, Issue 4, 2013, Pages 595-599

An investigation of band profile around the grain boundary of Cu(InGa)Se2 solar cell material by scanning probe microscopy

Author keywords

band profile; CIGS; grain boundary; scanning probes; solar cell

Indexed keywords

BAND PROFILE; CIGS; CONDUCTION BAND EDGE; KELVIN PROBE FORCE MICROSCOPY; PHOTOGENERATED ELECTRONS; SCANNING PROBES; SCANNING TUNNELING SPECTROSCOPY; SOLAR CELL MATERIALS;

EID: 84878167313     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1235     Document Type: Article
Times cited : (34)

References (24)
  • 4
    • 27844475333 scopus 로고    scopus 로고
    • Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier
    • Persson C, Zunger A,. Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier. Applied Physics Letters 2005; 87: 211904.
    • (2005) Applied Physics Letters , vol.87 , pp. 211904
    • Persson, C.1    Zunger, A.2
  • 6
    • 26244448252 scopus 로고    scopus 로고
    • The impact of charged grain boundaries on thin-film solar cells and characterization
    • Metzger W, Gloeckler M,. The impact of charged grain boundaries on thin-film solar cells and characterization. Journal of Applied Physics 2005; 98: 063701.
    • (2005) Journal of Applied Physics , vol.98 , pp. 063701
    • Metzger, W.1    Gloeckler, M.2
  • 17
    • 33645531405 scopus 로고    scopus 로고
    • Photovoltage mapping on polycrystalline silicon solar cells through potential measurements by atomic force microscopy with piezoresistive cantilever
    • Igarashi T, Ujihara T, Takahashi T,. Photovoltage mapping on polycrystalline silicon solar cells through potential measurements by atomic force microscopy with piezoresistive cantilever. Japanese Journal of Applied Physics 2006; 45: 2128-2131.
    • (2006) Japanese Journal of Applied Physics , vol.45 , pp. 2128-2131
    • Igarashi, T.1    Ujihara, T.2    Takahashi, T.3
  • 19
    • 47549099183 scopus 로고    scopus 로고
    • Minority carrier lifetime in polycrystalline silicon solar cells studied by photoassisted Kelvin probe force microscopy
    • Takihara M, Ujihara T, Takahashi T,. Minority carrier lifetime in polycrystalline silicon solar cells studied by photoassisted Kelvin probe force microscopy. Applied Physics Letters 2008; 93: 021902.
    • (2008) Applied Physics Letters , vol.93 , pp. 021902
    • Takihara, M.1    Ujihara, T.2    Takahashi, T.3
  • 20
    • 70449717349 scopus 로고    scopus 로고
    • Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy
    • Takihara M, Takahashi T, Ujihara T,. Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy. Applied Physics Letters 2009; 95: 191908.
    • (2009) Applied Physics Letters , vol.95 , pp. 191908
    • Takihara, M.1    Takahashi, T.2    Ujihara, T.3
  • 21
    • 80051955968 scopus 로고    scopus 로고
    • Photoassisted Kelvin probe force microscopy on multicrystalline Si solar cell materials
    • Takahashi T,. Photoassisted Kelvin probe force microscopy on multicrystalline Si solar cell materials. Japanese Journal of Applied Physics 2011; 50: 08LA05.
    • (2011) Japanese Journal of Applied Physics , vol.50
    • Takahashi, T.1
  • 22
    • 0000826939 scopus 로고    scopus 로고
    • Scanning tunneling spectroscopy of n-type GaAs under laser irradiation
    • Takahashi T, Yoshita M,. Scanning tunneling spectroscopy of n-type GaAs under laser irradiation. Applied Physics Letters 1997; 70: 2162-2164. (Pubitemid 127611299)
    • (1997) Applied Physics Letters , vol.70 , Issue.16 , pp. 2162-2164
    • Takahashi, T.1    Yoshita, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.