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Volumn 14, Issue 8, 2013, Pages 1966-1971

Ferroelectric transistor memory arrays on flexible foils

(9) Van Breemen, Albert a Kam, Benjamin b Cobb, Brian a Rodriguez, Francisco Gonzales a Van Heck, Gert a Myny, Kris b Marrani, Alessio c Vinciguerra, Vincenzo d Gelinck, Gerwin a

a HOLST CENTRE (Netherlands)

b IMEC (Belgium)

c Solvay Specialty Polymers Italy (Italy)

d STMICROELECTRONICS (Italy)

Author keywords

Ferroelectric polymer; Indium Gallium Zinc Oxide; Nonvolatile memory arrays; P(VDF TrFE); semiconductor

Indexed keywords

ELECTRIC FIELDS; ELECTRIC SWITCHES; ETHYLENE; FERROELECTRIC MATERIALS; FERROELECTRICITY; GALLIUM COMPOUNDS; GATE DIELECTRICS; II-VI SEMICONDUCTORS; MEMORY ARCHITECTURE; OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES; ZINC OXIDE;

ELECTRONIC COMPONENT; FERROELECTRIC GATE; FERROELECTRIC POLYMERS; FERROELECTRIC TRANSISTORS; INDIUM GALLIUM ZINC OXIDES; NON-VOLATILE MEMORY; POLY(ETHYLENE NAPHTHALATE); PVDF-TRFE;

TRANSISTORS;

EID: 84878145315 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2013.04.025 Document Type: Article

Times cited : (32)

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