Low-voltage operation of ferroelectric gate thin film transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

Applied Physics Express

Volumn 4, Issue 9, 2011, Pages

  Lee, Gwang Geun ^a   Fujisaki, Yoshihisa ^b   Ishiwara, Hiroshi ^a,c   Tokumitsu, Eisuke ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; ELECTRICAL CHARACTERISTIC; FERROELECTRIC GATE; FERROELECTRIC POLYMERS; FERROELECTRIC PROPERTY; FERROELECTRIC-GATE THIN FILM TRANSISTORS; GLASS SUBSTRATES; INDIUM GALLIUM ZINC OXIDES; LOW VOLTAGE OPERATION; MEMORY WINDOW; NON-VOLATILE MEMORIES; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); TOP-GATE; TRIFLUOROETHYLENE; VINYLIDENE FLUORIDE;

AMORPHOUS FILMS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; GALLIUM; GALLIUM ALLOYS; SUBSTRATES; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 80052568118     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.091103     Document Type: Article

References (27)

1. R. C. G. Naber et al.: Nat. Mater. 4 (2005) 243.
2. R. C. G. Naber et al.: Appl. Phys. Lett. 87 (2005) 203509.
3. T. Sekitani et al.: IEEE Trans. Electron Devices 56 (2009) 1027.
4. F. Xia et al.: J. Appl. Phys. 92 (2002) 3111.
5. N. Tsutsumi et al.: Polym. Int. 56 (2007) 1254.
6. A. J. J. M. van Breemen et al.: Appl. Phys. Lett. 98 (2011) 183302.
7. T. Furukawa et al.: IEEE Trans. Dielectr. Insul. 13 (2006) 1120.
8. K. Urayama et al.: Macromolecules 33 (2000) 8269.
9. Y. Takahashi et al.: IEEE Trans. Dielect. Electr. Insul. 11 (2004) 227.
10. R. C. G. Naber et al.: Appl. Phys. Lett. 85 (2004) 2032.
11. H. Xu et al.: J. Appl. Phys. 105 (2009) 034107.
12. H. Xu et al.: Appl. Phys. Lett. 90 (2007) 092903.
13. S. Fujisaki et al.: Appl. Phys. Lett. 90 (2007) 162902.
14. Y. Mabuchi et al.: Proc. 28th Meet. Ferroelectric Materials and Their Applications (FMA28), p. 2609.
15. C. W. Choi et al.: Appl. Phys. Lett. 93 (2008) 182902.
16. C. A. Nguyen et al.: Org. Electron. 9 (2008) 1087.
17. C. A. Nguyen et al.: Org. Electron. 10 (2009) 145.
18. F. A. Yildirim et al.: Appl. Phys. Lett. 90 (2007) 083501.
19. G. H. Gelinck et al.: Appl. Phys. Lett. 87 (2005) 092903.
20. K. Müller et al.: J. Appl. Phys. 98 (2005) 056104.
21. S. J. Kang et al.: Nano Lett. 11 (2011) 138.
22. C. H. Park et al.: J. Mater. Chem. 20 (2010) 2638.
23. S. M. Yoon et al.: Appl. Phys. Lett. 96 (2010) 232903.
24. S. M. Yoon et al.: Electrochem. Solid-State Lett. 13 (2010) H141.
25. G. G. Lee et al.: presented at 17th Int. Display Workshops (IDW'10), 2010.
26. G. G. Lee et al.: presented at MRS Fall Meet., 2009.
27. S. L. Miller and P. J. McWhorter: J. Appl. Phys. 72 (1992) 5999.