Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN

Journal of Applied Physics

Volumn 113, Issue 18, 2013, Pages

  Sztein, Alexander ^a   Haberstroh, John ^b   Bowers, John E ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; DEFORMATION POTENTIAL; DISLOCATION SCATTERING; ELECTRICAL CONDUCTIVITY; HIGH-TEMPERATURE POWER; SCATTERING MECHANISMS; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES;

ALUMINUM; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; INDIUM; MATERIALS SCIENCE; OPTIMIZATION; PHONONS; SCATTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 84878085791     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804174     Document Type: Article

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