High temperature thermoelectric properties of optimized InGaN

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Sztein, Alexander ^a   Ohta, Hiroaki ^a   Bowers, John E ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; HIGH QUALITY; HIGH TEMPERATURE THERMOELECTRIC PROPERTIES; HIGH-TEMPERATURE THERMOELECTRIC APPLICATIONS; III-NITRIDE; MAXIMUM VALUES; ROOM TEMPERATURE; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; HIGH TEMPERATURE APPLICATIONS; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

CARRIER CONCENTRATION;

EID: 84855333000     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3670966     Document Type: Article

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