Thermoelectric properties of Al1-xInxN and Al1-y-zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2065-2067

  Yamaguchi, Shigeo ^a,b   Iwamura, Yasuo ^a,b   Yamamoto, Atsushi ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY CONVERSION; POWER GENERATION; SEEBECK EFFECT; SPUTTERING; THERMAL CONDUCTIVITY; WASTE HEAT;

THERMOELECTRIC POWER DEVICES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037475097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560560     Document Type: Article

References (14)

1. G. D. Mahan, Solid State Phys. 51, 81 (1998).
2. W. Shin, M. Murayama, K. Ikeda, and S. Sago, Jpn. J. Appl. Phys. 39, 1254 (2000).
3. S. Bhattacharya, A. L. Pope, R. T. Littleton, T. M. Tritt, V. Ponnambalam, Y. Xia, and S. J. Poon, Appl. Phys. Lett. 77, 2476 (2000).
4. J. P. Dismukes, L. Ekstrom, E. F. Steigmeier, I. Kudman, and D. S. Beers, J. Appl. Phys. 35, 2899 (1964).
5. B. C. Sales, D. Mandrus, and R. K. Williams, Science 272, 1325 (1996).
6. C. Uher, J. Yang, S. Hu, D. T. Morelli, and G. P. Meisner, Phys. Rev. B 59, 8615 (1999).
7. H. Hohl, A. P. Ramirez, C. Goldman, G. Ernst, B. Wolfing, and E. Bucher, J. Phys.: Condens. Matter 11, 1697 (1999).
8. K. Mastronardi, D. Young, C.-C. Wang, P. Khalifah, A. P. Ramirez, and R. J. Cava, Appl. Phys. Lett. 74, 1415 (1999).
9. I. Terasaki, Y. Sasago, and K. Uchinokura, Phys. Rev. B 56, R12685 (1997).
10. M. Kariya, S. Nitta, S. Yamaguchi, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 37, L697 (1998).
11. S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki, Appl. Phys. Lett. 76, 876 (2000).
12. K. Seeger, Semiconductor Physics (Springer, Berlin, 1999).
13. J. H. Edgar, Properties of Nitride Semiconductors (INSPEC, New York, 1999).
14. J. H. Edger, Properties of Nitride Semiconductors (INSPEC, New York, 199)