Thermoelectric properties and thermoelectric devices of free-standing GaN and epitaxial GaN layer

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4501-4504

  Kaiwa, N ^a   Hoshino, M ^a   Yaginuma, T ^a   Izaki, R ^a   Yamaguchi, S ^a,b   Yamamoto, A ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

GaN; HVPE; Thermoelectric

Indexed keywords

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FRANCIUM; PRODUCT DEVELOPMENT; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

EPITAXIAL GAN LAYER; FREE-STANDING GAN; HVPE; THERMOELECTRIC PROPERTIES;

GALLIUM NITRIDE;

EID: 33847033006     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.145     Document Type: Article

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