Thermoelectric properties of and devices based on free-standing GaN

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Yamaguchi, Shigeo ^a,b   Izaki, Ryohei ^a   Kaiwa, Nakaba ^a   Yamamoto, Atsushi ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FUNCTIONS; IONIZATION; PHONONS; THERMOELECTRICITY; VAPOR PHASE EPITAXY;

CONDUCTION BANDS (CB); SEEBECK COEFFICIENTS; THERMOELECTRIC MATERIALS; THERMOELECTRIC POWER;

GALLIUM NITRIDE;

EID: 24344442451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1951048     Document Type: Article

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