Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering

Electronic Materials Letters

Volumn 9, Issue 3, 2013, Pages 279-282

  Jiao, Yang ^a   Zhang, Xinan ^a   Zhai, Junxia ^a   Yu, Xiankun ^a   Ding, Linghong ^a   Zhang, Weifeng ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

amorphous In2O3 films; mobility; surface states; transistor

Indexed keywords

CRYSTALLINE COUNTERPART; DEVICE PERFORMANCE; DIRECT CURRENT MAGNETRON SPUTTERING; ENHANCEMENT MODES; FABRICATION TEMPERATURE; LARGE-AREA ELECTRONICS; ROOM TEMPERATURE; SPUTTERING TIME;

AMORPHOUS SILICON; CARRIER MOBILITY; FABRICATION; FIELD EFFECT TRANSISTORS; MAGNETRON SPUTTERING; SURFACE STATES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AMORPHOUS FILMS;

EID: 84878066355     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-2198-4     Document Type: Article

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