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Volumn , Issue , 2008, Pages 8-18

Aluminum oxynitride capacitors for multilayer devices with higher energy density and wide temperature properties

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL TECHNOLOGIES; DECOMPOSITION TEMPERATURE; HIGH-TEMPERATURE CAPABILITY; HIGHER ENERGY DENSITY; MAGNETRON REACTIVE SPUTTERING; PARALLEL PLATE CAPACITORS; SUBSTRATE TEMPERATURE; TEMPERATURE PROPERTIES;

EID: 84877748421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (16)
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    • M. Rabuffi and G. Picci. "Status quo and future prospects for metallized polypropolene energy storage capacitors," IEEE Trans. Plasma Sci., 30, 1939-1942 (2002).
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    • Rabuffi, M.1    Picci, G.2
  • 3
    • 0031131274 scopus 로고    scopus 로고
    • High quality optoelectronic grade epitaxial AlN films on α-Al2O3, Si, and 6H-SiC by pulsed laser deposition
    • R.D. Vispute, J. Narayan, and J.D. Budai. "High quality optoelectronic grade epitaxial AlN films on α-Al2O3, Si, and 6H-SiC by pulsed laser deposition.," Thin Solid Films, 299, 94-103 (1997).
    • (1997) Thin Solid Films , vol.299 , pp. 94-103
    • Vispute, R.D.1    Narayan, J.2    Budai, J.D.3
  • 4
    • 1842427341 scopus 로고    scopus 로고
    • Thickness dependence of the properties of highly c-axis textured AlN thin films
    • F. Martin, P. Muralt, M.-A. Dubois, and A. Pezous. Thickness dependence of the properties of highly c-axis textured AlN thin films. J. Vac. Sci. Technol. A, 22, 361-365 (2004).
    • (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 361-365
    • Martin, F.1    Muralt, P.2    Dubois, M.-A.3    Pezous, A.4
  • 7
    • 0033285750 scopus 로고    scopus 로고
    • Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions
    • V. Dimitrova, D. Manova, and E. Valcheva. Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions. Mater. Sci. Eng. B 68, 1-4 (1999).
    • (1999) Mater. Sci. Eng. B , vol.68 , pp. 1-4
    • Dimitrova, V.1    Manova, D.2    Valcheva, E.3
  • 8
    • 0032122139 scopus 로고    scopus 로고
    • Magnetron sputtering of aluminum using oxygen or nitrogen as reactive gas
    • J. Schulte and G. Sobe. Magnetron sputtering of aluminum using oxygen or nitrogen as reactive gas. Thin Solid Films, 324, 19-24 (1998).
    • (1998) Thin Solid Films , vol.324 , pp. 19-24
    • Schulte, J.1    Sobe, G.2
  • 9
    • 0033883337 scopus 로고    scopus 로고
    • Development of SiNx and AlNx passivation layers
    • J.-W Lee and S.C.N. Cheng. Development of SiNx and AlNx passivation layers. Thin Solid Films, 358, 215-222 (2000).
    • (2000) Thin Solid Films , vol.358 , pp. 215-222
    • Lee, J.-W.1    Cheng, S.C.N.2
  • 10
    • 0032370406 scopus 로고    scopus 로고
    • Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study
    • K. Jagannadham, K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan. Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study. J. Vac. Sci. Technol. A 16, 2804-2815 (1998).
    • (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 2804-2815
    • Jagannadham, K.1    Sharma, K.2    Wei, Q.3    Kalyanraman, R.4    Narayan, J.5
  • 11
    • 3042615298 scopus 로고    scopus 로고
    • Nearly amorphous to epitxial growth of aluminum nitride films
    • T.T. Leung and C.W. Ong. "Nearly amorphous to epitxial growth of aluminum nitride films," Diamond Rel. Mater. 13, 1603-1608 (2004).
    • (2004) Diamond Rel. Mater , vol.13 , pp. 1603-1608
    • Leung, T.T.1    Ong, C.W.2
  • 13
    • 84877760288 scopus 로고    scopus 로고
    • Aluminum oxynitride dielectrics for high power, wide temperature capacitor applications
    • K.R. Bray, R.L.C. Wu, S. Fries-Carr, and J. Weimer, "Aluminum oxynitride dielectrics for high power, wide temperature capacitor applications", CARTS USA 2006, 161-170, (2006).
    • (2006) CARTS USA , pp. 161-170
    • Bray, K.R.1    Wu, R.L.C.2    Fries-Carr, S.3    Weimer, J.4
  • 14
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    • Aluminum nitride dielectrics for high energy density capacitors
    • K.R. Bray, R.L.C. Wu, S. Fries-Carr, and J. Weimer, "Aluminum nitride dielectrics for high energy density capacitors", Ceramic Transactions 179, 45-55, (2006).
    • (2006) Ceramic Transactions , vol.179 , pp. 45-55
    • Bray, K.R.1    Wu, R.L.C.2    Fries-Carr, S.3    Weimer, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.