Development of SiNx and AlNx passivation layers

Thin Solid Films

Volumn 358, Issue 1, 2000, Pages 215-222

  Lee, J W ^a   Cheng, S C N ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Read Rite   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; MAGNETRON SPUTTERING; MORPHOLOGY; PASSIVATION; POROSITY; POROUS MATERIALS; PRESSURE EFFECTS; SILICON NITRIDE; SPUTTER DEPOSITION; SURFACE ROUGHNESS;

ALUMINUM NITRIDE; MICROVOIDS;

AMORPHOUS FILMS;

EID: 0033883337     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00702-6     Document Type: Article

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