Circular photogalvanic effect at inter-band excitation in InN

Solid State Communications

Volumn 145, Issue 4, 2008, Pages 159-162

  Zhang, Z ^a   Zhang, R ^a   Liu, B ^a   Xie, Z L ^a   Xiu, X Q ^a   Han, P ^a   Lu, H ^a   Zheng, Y D ^a   Chen, Y H ^b   Tang, C G ^b   Wang, Z G ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A. InN; D. Inter band transition; D. Photogalvanic

Indexed keywords

ELECTRIC CURRENTS; LASER APPLICATIONS; MATHEMATICAL MODELS; SPIN POLARIZATION;

CURRENT AMPLITUDE; INTER-BAND TRANSITION; PHOTOGALVANIC EFFECT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 36849070905     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.10.040     Document Type: Article

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