Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities

Optics Express

Volumn 21, Issue 8, 2013, Pages 10324-10334

  Haret, Laurent Daniel ^a   Checoury, Xavier ^a   Bayle, Fabien ^a   Cazier, Nicolas ^a   Boucaud, Philippe ^a   Combrié, Sylvain ^b   De Rossi, Alfredo ^b  

^a UNIV PARIS SUD   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MICROCAVITIES; PHOTONIC DEVICES; PHOTONICS;

CARRIER DISTRIBUTIONS; CAVITY QUALITY FACTOR; ELECTRON-BEAM-INDUCED CURRENT; FABRICATED STRUCTURES; METAL SEMICONDUCTOR METAL; PHOTONIC CRYSTAL MICROCAVITIES; SILICON PHOTONIC CRYSTALS; TRANSMISSION SPECTRUMS;

SEMICONDUCTOR JUNCTIONS;

SILICON;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; PHOTON; SEMICONDUCTOR; SURFACE PLASMON RESONANCE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MINIATURIZATION; PHOTONS; SEMICONDUCTORS; SILICON; SURFACE PLASMON RESONANCE;

EID: 84877124478     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.010324     Document Type: Article

References (33)

1. B. Jalali and S. Fathpour, "Silicon photonics," J. Lightw. Technol. 24, 4600-4615 (2006).
2. M. El Kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, and G. Patriarche, "Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands," J. Appl. Phys. 92, 1858-1861 (2002).
3. J. K. Doylend, P. E. Jessop, and A. P. Knights, "Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection," Opt. Express 18, 14671-14678 (2010).
4. H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, "Photonic crystal silicon optical modulators: Carrier-injection and depletion at 10 Gb/s," IEEE J. Quantum Electron. 48, 210-220 (2012).
5. G. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, "Silicon optical modulators," Nat. Photon. 4, 518-526 (2010).
6. L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, "An ultra-small, low-power, all-optical flip-flop memory on a silicon chip," Nat. Photon. 4, 182-187 (2010).
7. T. Tanabe, M. Notomi, S. Mitsugi, A. Shinya, and E. Kuramochi, "Fast bistable all-optical switch and memory on a silicon photonic crystal on-chip," Opt. Lett. 30, 2575-2577 (2005).
8. M. Hill, H. Dorren, T. de Vries, X. Leijtens, J. Besten, B. Smallbrugge, Y.-S. Oei, H. Binsma, G.-D. Khoe, and M. Smit, "A fast low-power optical memory based on coupled mico-ring lasers," Nature 432, 206-209 (2004).
9. Z. Han, X. Checoury, D. Neel, S. David, M. El Kurdi, and P. Boucaud, "Optimized design for 2×106 ultra-high Q silicon photonic crystal cavities," Opt. Comm. 283, 4387-4391 (2010).
10. H. Rong, S. Xu, Y.-H. Kuo, V. Sih, O. Cohen, O. Raday, and M. Paniccia, "Low-threshold continuous-wave Raman silicon laser," Nat. Photon. 1, 232-237 (2007).
11. X. Checoury, Z. Han, and P. Boucaud, "Stimulated Raman scattering in silicon photonic crystal waveguides under continuous excitation," Phys. Rev. B 82, 041308 (2010).
12. C. Monat, M. Ebnali-Heidari, C. Grillet, B. Corcoran, B. J. Eggleton, T. P. White, L. OFaolain, J. Li, and T. F. Krauss, "Four-wave mixing in slow light engineered silicon photonic crystal waveguides," Opt. Express 18, 22915-22927 (2010).
13. T. J. Johnson and O. Painter, "Passive modification of free carrier lifetime in high-Q silicon-on-insulator optics," 2009 Conf. On Lasers and Electro-optics and Quantum Electronics and Laser Science Conf. (cleo/qels 2009), Vols 1-5 pp. 72-73 (2009).
14. A. Berrier, M. Mulot, G. Malm, M. Ostling, and S. Anand, "Carrier transport through a dry-etched InP-based two-dimensional photonic crystal," J. Appl. Phys. 101, 123101 (2007).
15. P. Cardile, G. Franzo, R. L. Savio, M. Galli, T. F. Krauss, F. Priolo, and L. O. Faolain, "Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals," Appl. Phys. Lett. 98, 203506 (2011).
16. B. Ellis, T. Sarmiento, M. Mayer, B. Zhang, J. Harris, E. Haller, and J. Vuckovic, "Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction," Appl. Phys. Lett. 96, 181103 (2010).
17. J. Petykiewicz, G. Shambat, B. Ellis, and J. Vuckovic, "Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes," Appl. Phys. Lett. 101, 011104 (2012).
18. T. Tanabe, K. Nishiguchi, E. Kuramochi, and M. Notomi, "Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity," Opt. Express 17, 22505-22513 (2009).
19. L.-D. Haret, X. Checoury, Z. Han, P. Boucaud, S. Combrie, and A. De Rossi, "All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength," Opt. Express 18, 23965-23972 (2010).
20. T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, "All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip," Appl. Phys. Lett. 96, 101103 (2010).
21. R. Hayakawa, N. Ishikura, H. C. Nguyen, and T. Baba, "Two-photon- absorption photodiodes in Si photoniccrystal slow-light waveguides," Appl. Phys. Lett. 102, 031114 (2013).
22. R. Soref and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23, 123-129 (1987).
23. Q. Lin, O. J. Painter, and G. P. Agrawal, "Nonlinear optical phenomena in silicon waveguides: Modeling and applications," Opt. Express 15, 16604-16644 (2007).
24. E. Kuramochi, M. Notomi, S. Mitsugi, A. Shinya, T. Tanabe, and T. Watanabe, "Ultrahigh-Q photonic crystal nanocavities realized by the local width modulation of a line defect," Appl. Phys. Lett. 88, 041112 (2006).
25. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer-Verlag, 1984).
26. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, "Electron drift velocity in silicon," Phys. Rev. B 12, 2265-2284 (1975).
27. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley-Blackwell, 2006 (3rd edition)).
28. S. Sze, D. C. Jr., and A. Loya, "Current transport in metal-semiconductor-metal (MSM) structures," Solid-State Electron. 14, 1209-1218 (1971).
29. T. E. Everhart, O. C.Welles, and C.W. Oatley, "Factors affecting contrast and resolution in the scanning electron microscope," J. Electron. Control 7, 97-111 (1959).
30. T. E. Everhart, O. C. Wells, and R. K. Matta, "A novel method of semiconductor device measurements," Proc. IEEE 52, 1642-1647 (1964).
31. K. O. Leedy, "A bibliography on electron beam induced current analysis of semiconductor devices," Solid-State Tech. 20, 45-48 (1977).
32. W. A. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, "InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights," Appl. Phys. Lett. 69, 3578-3580 (1996).
33. C. O. Chui, A. K. Okyay, and K. C. Saraswat, "Effective dark current suppression with asymmetric MSM photodetectors in group IV semiconductors, " IEEE Photon. Technol. Lett. 15, 1585-1587 (2003).