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Volumn 96, Issue 18, 2010, Pages

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

(7) Ellis, Bryan a Sarmiento, Tomas b Mayer, Marie c,d Zhang, Bingyang a Harris, James b Haller, Eugene c,d Vuckovic, Jelena a

a STANFORD UNIVERSITY (United States)

b Stanford University (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d Department of Materials Science Berkeley ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTRICALLY PUMPED; FORWARD BIAS; ION IMPLANTATION DOPING; NANOCAVITY LASERS; P-I-N JUNCTIONS; PHOTONIC CRYSTAL NANOCAVITY; QUANTUM DOT;

DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; ION IMPLANTATION; LIGHT SOURCES; PHOTONIC CRYSTALS; PUMPS;

PUMPING (LASER);

EID: 77952807503 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3425663 Document Type: Article

Times cited : (48)

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