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Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes

(4) Petykiewicz, Jan a Shambat, Gary a Ellis, Bryan a Vučković, Jelena a

a STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; DESIGN OPTIMIZATION; FINITE ELEMENT SIMULATIONS; GAAS; HIGH CONDUCTIVITY; NANO-CAVITIES; OVER CURRENT; PHOTONIC CRYSTAL CAVITIES; PIN DIODE; PRECISE CONTROL; STEADY-STATE OPERATION; SURFACE RECOMBINATIONS; TEMPERATURE INCREASE; THERMAL SIMULATIONS; TWO-DIMENSIONAL PHOTONIC CRYSTALS;

GALLIUM ARSENIDE; OPTIMIZATION; SEMICONDUCTING GALLIUM;

ELECTRIC PROPERTIES;

EID: 84863649806 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4732782 Document Type: Article

Times cited : (4)

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