Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors

Applied Physics Letters

Volumn 102, Issue 15, 2013, Pages

  Singh, Sanjeev ^a   Mohapatra, Swagat K ^b   Sharma, Asha ^a   Fuentes Hernandez, Canek ^a   Barlow, Stephen ^b   Marder, Seth R ^b   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; CHANNEL LENGTH; CHARGE MOBILITIES; N-TYPE DOPANTS; OPERATIONAL STABILITY; ORGANIC FIELD-EFFECT TRANSISTOR (OFETS); REFERENCE DEVICES; SELECTIVE CONTACTS;

DOMAIN WALLS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84877109890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802237     Document Type: Article

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