Molecular n-type doping of 1,4,5,8-naphthalene tetracarboxylic dianhydride by pyronin B studied using direct and inverse photoelectron spectroscopies

Advanced Functional Materials

Volumn 16, Issue 6, 2006, Pages 831-837

  Chan, Calvin K ^a   Kim, Eung Gun ^b   Brédas, Jean Luc ^b   Kahn, Antoine ^a  

^a Princeton University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); EVAPORATION; FERMI LEVEL; NAPHTHALENE; PHOTOELECTRON SPECTROSCOPY;

1,4,5,8-NAPHTHALENE TETRACARBOXYLIC DIANHYDRIDE; MOLECULAR LEVELS; N-DOPING; PYRONIN B (PYB);

AROMATIC COMPOUNDS;

EID: 33645656217     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200500402     Document Type: Article

References (28)

1. J. Blochwitz, M. Pfeiffer, T. Fritz, K. Leo, D. M. Alloway, P. A. Lee, N. R. Armstrong, Org. Electron. 2001, 2, 97.
2. W. Gao, A. Kahn, Appl. Phys. Lett. 2001, 79, 4040.
3. W. Gao, A. Kahn, Org. Electron. 2002, 3, 53.
4. W. Gao, A. Kahn, J. Phys. Condens. Matter 2003, 15, S2757.
5. W. Gao, A. Kahn, J. Appl. Phys. 2003, 94, 359.
6. J. Kido, T. Matsumoto, Appl. Phys. Lett. 1998, 73, 2866.
7. G. Parthasarathy, C. Shen, A. Kahn, S. R. Forrest, J. Appl. Phys. 2001, 89, 4986.
8. L. Yan, N. J. Watkins, S. Zorba, Y. Gao, C. W. Tang, Appl. Phys. Lett. 2001, 79, 4148.
9. M. G. Mason, C. W. Tang, L.-S. Hung, P. Raychaudhuri, J. Madathil, D. J. Giesen, L. Yan, Q. T. Le, Y. Gao, S.-T. Lee, L. S. Liao, L. F. Cheung, W. R. Salaneck, D. A. dos Santos, J.-L. Brédas, J. Appl. Phys. 2001, 89, 2756.
10. Q. T. Le, L. Yan, Y. Gao, M. G. Mason, D. J. Giesen, C. W. Tang, J. Appl. Phys. 2000, 87, 375.
11. K. Ihm, T.-H. Kang, C.-C. Hwang, Y.-J. Park, K.-B. Lee, B. Kim, C.-H. Jeon, C.-Y. Park, K. Kim, Y.-H. Tak, Appl. Phys. Lett. 2003, 83, 2949.
12. J. Liu, A. R. Duggal, J. J. Shiang, C. M. Heller, Appl. Phys. Lett. 2004, 85, 837.
13. A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett. 2003, 82, 4495.
14. A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, S. Machill, Adv. Funct. Maler. 2004, 14, 255.
15. E. V. Tsiper, Z. Soos, W. Gao, A. Kahn, Chem. Phys. Lett. 2002, 360, 47.
16. F. Amy, C. Chan, A. Kahn, Org. Electron. 2005, 6, 85.
17. S. M. Sze, in Physics of Semiconductor Devices, Wiley, New York 1981, pp. 74-79.
18. B. Maennig, M. Pfeiffer, A. Nollau, X. Zhou, K. Leo, Phys. Rev. B 2001, 64, 195 208.
19. M. Lampert, P. Mark, in Current Injection in Solids, Academic Press, New York 1970, pp. 182-184.
20. C. Shen, A. Kahn, J. Appl. Phys. 2001, 90, 4549.
21. F. Li, A. Werner, M. Pfeiffer, K. Leo, X. Liu, J. Phys. Chem. B 2004, 108, 17 076.
22. C. I. Wu, Y. Hirose, H. Sirringhaus, A. Kahn, Chem. Phys. Lett. 1997, 272, 43.
23. J. Cornil, S. Vanderdonckt, R. Lazzaroni, D. A. dos Santos, G. Thys, H. J. Geise, L.-M. Yu, M. Szablewski, D. Bloor, M. Lögdlund, W. R. Salaneck, N. E. Gruhn, D. L. Lichtenberger, P. A. Lee, N. R. Armstrong, J.-L. Brédas, Chem. Mater. 1999, 11, 2436.
24. I. G. Hill, A. Kahn, J. Cornil, D. A. dos Santos, J.-L. Brédas, Chem. Phys. Lett. 2000, 317, 444.
25. A. D. Becke, Phys. Rev. A 1988, 38, 3098.
26. C. Lee, W. Yang, R. G. Parr, Phys. Rev. B 1988, 37, 785.
27. N. Troullier, J. L. Martins, Phys. Rev. B 1991, 43, 1993.
28. CPMD, MPI für Festkörperforschung Stuttgart and IBM Zurich Research Laboratory (3.9.1), 2004.