Effects of bottom electrode on resistive switching characteristics of ZnO films

Wuli Xuebao/Acta Physica Sinica

Volumn 62, Issue 7, 2013, Pages

  Li, Hong Xia ^a   Chen, Xue Ping ^a   Chen, Qi ^a   Mao, Qi Nan ^a   Xi, Jun Hua ^a   Ji, Zhen Guo ^a,b  

^a HANGZHOU DIANZI UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Bottom electrode; Resistive switching; ZnO thin film

Indexed keywords

BOTTOM ELECTRODES; DC MAGNETRON SPUTTERING; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SCHOTTKY BARRIER HEIGHTS; SPACE CHARGE LIMITED CONDUCTION; ZNO THIN FILM;

FABRICATION; METALLIC FILMS; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 84877065528     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: 10.7498/aps.62.077202     Document Type: Article

References (23)

1. Do Y H, Kwak J S, Bae Y C, Lee J H, Kim Y, Im H, Hong J P 2010 Curr. Appl. Phys. 10 E71
2. Waser R, Aono M 2007 Nat Mater 6 833
3. Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870
4. Ahn S E, Lee M J, Park Y, Kang B S, Lee C B, Kim KH, Seo S, Suh D S, Kim D C, Hur J, Stefanovich G, Yin H, Yoo I K, Lee J H, Park J B, Baek I G, Park B H 2008 Adv. Mater 20 924
5. Shi W, Tai Q, Xia X H, Yi M D, Xie L H, Fan Q L, Wang L H, Wei Ang, Huang W 2012 Chin. Phys. Lett. 29 087201
6. Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese)
7. Xing Z W, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
8. Park J W, Jung K, Yang M K, Lee J K 2007 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Nara-City, Japan, May 27-31, 2007, p46
9. Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F, Tsai M J 2008 Appl. Phys. Lett. 92 022110
10. Jeong D S, Schroeder H, Waser R 2009 Phys. Rev. B 79 195317
11. Dong R, Lee D S, Pyun M B, Hasan M, Choi H J, Jo M S, Seong D J, Chang M, Heo S H, Lee J M, Park H K, Hwang H 2008 Appl. Phys. A-Mater. 93 409
12. Lee C B, Kang B S, Benayad A, Lee M J, Ahn S E, Kim K H, Stefanovich G., Park Y, Yoo I K 2008 Appl. Phys. Lett. 93 042115
13. Liu K C, Tzeng W H, Chang K M, Chan Y C, Kuo C C, Cheng C W 2010 Microelectronics Reliability 50 670
14. Xu N, Liu L F, Sun X, Chen C, Wang Y, Han D D, Liu X Y, Han R Q, Kang J F, Yu B 2008 Semicond Sci. Tech. 23 075019
15. Oh S C, Jung H Y, Lee H 2011 J. Appl. Phys. 109 124511
16. Kim W G, Rhee S W 2010 Microelectronic Engineering 87 98
17. Yang Y C, Pan F, Liu Q, Liu M, Zeng F 2009 Nano. Lett. 9 1636
18. Chen G, Song C, Chen Ch, Gao Sh, Zeng F, Pan F 2012 Adv. Mater. 24 3515
19. Chen X M, Wu G H, Bao D H 2008 Appl. Phys. Lett. 93 093501
20. Pan F, Chen C, Wang Z S, Yang Y C, Yang J, Zeng F 2010 Progress in Natural Science: Materials International 20 01
21. Sundaram K B, Khan A 1997 J. Vac. Sci. Technol. A 15 428
22. Baldo M A, O'Brien D F, Thompson M E, Forrest S R 1999 Phys. Rev. B 60 14422
23. Alshareef H N, Quevedo-Lopez M A, Majhi P 2011 MRS BULL 36 90