Loss of siloxane monolayers from GaN surfaces in water

Langmuir

Volumn 29, Issue 17, 2013, Pages 5145-5149

  Arisio, Christina ^a   Cassou, Catherine A ^b   Lieberman, Marya ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINOPROPYLTRIETHOXYSILANE; FUNCTIONALIZED SURFACES; GALLIUM OXIDES; IMMERSION IN WATERS; OCTADECYLTRICHLOROSILANE; PASSIVATING LAYER; SILOXANE MONOLAYERS; WATER CONTACT ANGLE;

ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; DISSOLUTION; PHOTOELECTRONS; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

3 AMINOPROPYLTRIETHOXYSILANE; GALLIUM; GALLIUM NITRIDE; GAMMA-AMINOPROPYLTRIETHOXYSILANE; OCTADECYLTRICHLOROSILANE; SILANE DERIVATIVE; SILOXANE; WATER;

ARTICLE; CHEMICAL PHENOMENA; CHEMISTRY; SOLUBILITY; SURFACE PROPERTY;

GALLIUM; HYDROPHOBIC AND HYDROPHILIC INTERACTIONS; SILANES; SILOXANES; SOLUBILITY; SURFACE PROPERTIES; WATER;

EID: 84877014604     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la400849j     Document Type: Article

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