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The typical method for determination of the HOMO level, ultraviolet photoelectron spectroscopy, was not used in the present work since rapid UV-induced degradation would yield spurious results [17]. The value was therefore obtained from Ref. [24].
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In contrast, due to the downward band bending in p-type GaN and SiC, UV illumination results in surface accumulation of electrons instead of holes, independent of energetic alignment. In the absence of recombination sites, the molecular monolayers are stable under UV illumination.
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In contrast, due to the downward band bending in p-type GaN and SiC, UV illumination results in surface accumulation of electrons instead of holes, independent of energetic alignment. In the absence of recombination sites, the molecular monolayers are stable under UV illumination.
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For example, the charge transfer dipole would be significantly reduced due to enhanced screening in the presence of water. Referring to the water splitting mechanism suggested in Ref. [26], electron transfer to the oxygen redox level of the adsorbed water film could enhance electronic transitions from shallow donor states to unoccupied defect states and therefore also the flux of holes drifting to the surface. Direct chemical reactions of hydrogen peroxide or non-radical hydroxide, being two of the possible products of water splitting, appears unlikely as these species are not reactive enough to cause chemical cracking of the alkyl chain.
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