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Volumn 102, Issue 16, 2013, Pages

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

(11) Shi, Zhifeng a Zhang, Yuantao a Wu, Bin a Cai, Xupu a Zhang, Jinxiang a Xia, Xiaochuan b Wang, Hui a Dong, Xin a Liang, Hongwei b Zhang, Baolin a Du, Guotong a,b

a JILIN UNIVERSITY (China)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD BIAS; GOOD STABILITY; HIGH-PURITY; LOW EMISSION; OUT-DIFFUSION; P-TYPE CONDUCTIVITY; ULTRAVIOLET EMISSION; ULTRAVIOLET LIGHT-EMITTING DIODES;

DIODES; SILICON CARBIDE; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84876995904 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802806 Document Type: Article

Times cited : (28)

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