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Chinese Physics Letters

Volumn 29, Issue 1, 2012, Pages

A study of GaN grown on SiH4 pre-treated 6H-SiC substrates

(7) Song, Shi Wei a Liang, Hong Wei a Liu, Yang a Xia, Xiao Chuan a Shen, Ren Sheng a Luo, Ying Min a Du, Guo Tong a,b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b JILIN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR ALLOYS; SILICON CARBIDE;

BASIC CHARACTERISTICS; GAN THIN FILMS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NUCLEATION LAYERS; PRE-TREATMENTS; PRETREATMENT CONDITIONS; SIC SUBSTRATES; SURFACE OXIDE; SURFACE TERMINATION; VAPOR DEPOSITION SYSTEMS;

III-V SEMICONDUCTORS;

EID: 84863078504 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/29/1/018102 Document Type: Article

Times cited : (2)

References (12)

1
- 0035608411
- Shen B, Shi H T, Zhang R, Chen Z Z and Zheng Y D 2001 Chin. Phys. Lett. 18 283
- (2001) Chin. Phys. Lett. , vol.18 , Issue.2 , pp. 283
- Shen, B.¹ Shi, H.T.² Zhang, R.³ Chen, Z.Z.⁴ Zheng, Y.D.⁵

2
- 9944234895
- Edmond J, Abare A, Bergman M, Bharathan J, Bunker K L, Emerson D, Haberern K, Ibbetson J, Leung M, Russel P and Slater D 2004 J. Cryst. Growth 272 242
- (2004) J. Cryst. Growth , vol.272 , Issue.1-4 , pp. 242
- Edmond, J.¹ Abare, A.² Bergman, M.³ Bharathan, J.⁴ Bunker, K.L.⁵ Emerson, D.⁶ Haberern, K.⁷ Ibbetson, J.⁸ Leung, M.⁹ Russel, P.¹⁰ Slater, D.¹¹

3
- 0004682375
- Sasaki T and Matsuoka T 1988 J. Appl. Phys. 64 4531
- (1988) J. Appl. Phys. , vol.64 , Issue.9 , pp. 4531
- Sasaki, T.¹ Matsuoka, T.²

4
- 0000457472
- Lin M E, Strite S, Agarwal A, Salvador A, Zhou G L, Teraguchi N, Rockett A and Morkoc H 1993 Appl. Phys. Lett. 62 702
- (1993) Appl. Phys. Lett. , vol.62 , Issue.7 , pp. 702
- Lin, M.E.¹ Strite, S.² Agarwal, A.³ Salvador, A.⁴ Zhou, G.L.⁵ Teraguchi, N.⁶ Rockett, A.⁷ Morkoc, H.⁸

5
- 0032614208
- Xue Q Z, Xue Q K, Hasegawa Y, Tsong I S T and Sakurai T 1999 Appl. Phys. Lett. 74 2468
- (1999) Appl. Phys. Lett. , vol.74 , Issue.17 , pp. 2468
- Xue, Q.Z.¹ Xue, Q.K.² Hasegawa, Y.³ Tsong, I.S.T.⁴ Sakurai, T.⁵

6
- 0000706086
- Venneguesa P and Lahreche H 2000 Appl. Phys. Lett. 77 4310
- (2000) Appl. Phys. Lett. , vol.77 , Issue.26 , pp. 4310
- Venneguesa, P.¹ Lahreche, H.²

7
- 21544449397
- Kaplan R 1989 Surf. Sci. 215 111
- (1989) Surf. Sci. , vol.215 , Issue.1-2 , pp. 111
- Kaplan, R.¹

8
- 6944232643
- Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Porowski S, Pakula K, Baranowski J M, Foxon C T and Cheng T S 1996 Appl. Phys. Lett. 69 73
- (1996) Appl. Phys. Lett. , vol.69 , Issue.1 , pp. 73
- Leszczynski, M.¹ Teisseyre, H.² Suski, T.³ Grzegory, I.⁴ Bockowski, M.⁵ Jun, J.⁶ Porowski, S.⁷ Pakula, K.⁸ Baranowski, J.M.⁹ Foxon, C.T.¹⁰ Cheng, T.S.¹¹

9
- 0029755411
- Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, DenBaars S P and Speck J S 1996 Appl. Phys. Lett. 68 643
- (1996) Appl. Phys. Lett. , vol.68 , Issue.5 , pp. 643
- Heying, B.¹ Wu, X.H.² Keller, S.³ Li, Y.⁴ Kapolnek, D.⁵ Keller, B.P.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

10
- 70350118036
- Moram M A, Ghedia C S, Rao D V S, Barnard J S, Zhang Y, Kappers M J and Humphreys C J 2009 J. Appl. Phys. 106 073513
- (2009) J. Appl. Phys. , vol.106 , Issue.7 , pp. 073513
- Moram, M.A.¹ Ghedia, C.S.² Rao, D.V.S.³ Barnard, J.S.⁴ Zhang, Y.⁵ Kappers, M.J.⁶ Humphreys, C.J.⁷

11
- 0000515867
- Hino T, Tomiya S, Miyajima T, Yanashima K, Hashimoto S and Ikeda M 2000 Appl. Phys. Lett. 76 3421
- (2000) Appl. Phys. Lett. , vol.76 , Issue.23 , pp. 3421
- Hino, T.¹ Tomiya, S.² Miyajima, T.³ Yanashima, K.⁴ Hashimoto, S.⁵ Ikeda, M.⁶

12
- 0017291752
- Pankove J I and Hutchby J A 1976 J. Appl. Phys. 47 5387
- (1976) J. Appl. Phys. , vol.47 , Issue.12 , pp. 5387
- Pankove, J.I.¹ Hutchby, J.A.²

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