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Volumn 112, Issue 12, 2012, Pages

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

(15) Martens, K a,b Radu, I P a,b Mertens, S b Shi, X b Nyns, L b Cosemans, S b Favia, P b Bender, H b Conard, T b Schaekers, M b De Gendt, S a,b Afanas'Ev, V a,b Kittl, J A b Heyns, M a,b Jurczak, M b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CAPACITANCE; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; NANOELECTRONICS; PRECIOUS METAL COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR JUNCTIONS; TRANSITION METALS; TUNING; TUNNEL JUNCTIONS; VANADIUM DIOXIDE;

CAPACITANCE VOLTAGE CHARACTERISTIC; CONTACT RESISTIVITIES; INTERFACIAL TRANSITION; MATERIAL INTERFACES; ORDERS OF MAGNITUDE; PROOF OF PRINCIPLES; STRONGLY CORRELATED ELECTRONS; TUNNELING CURRENT;

METAL INSULATOR TRANSITION;

EID: 84876989420 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767473 Document Type: Article

Times cited : (51)

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