Current-induced metal-insulator transition in VOx thin film prepared by rapid-thermal-annealing

Thin Solid Films

Volumn 495, Issue 1-2, 2006, Pages 375-379

  Cho, Choong Rae ^a   Cho, Sungil ^a   Vadim, Sidorkin ^a   Jung, Ranju ^a   Yoo, Inkyeong ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Metal insulator transition; Vanadium oxide

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SPUTTERING; SWITCHING; TRANSITION METALS; VANADIUM;

ELECTRODE AREA; METAL-INSULATOR-TRANSITION; VANADIUM OXIDE; VERTICAL STRUCTURE;

THIN FILMS;

EID: 28044434902     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.241     Document Type: Conference Paper

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